Generating high dielectric constant blends from lower dielectric constant dipolar polymers using nanostructure engineering
نویسندگان
چکیده
منابع مشابه
High dielectric constant oxides
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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* This work was supported by a grant from the National Science Foundation. 'Yarmolinsky, M. B., and G. L. de la Haba, these PROCEEDINGS, 45, 1721 (1959). 2 Nathans, D., and F. Lipmann, these PROCEEDINGS, 47, 497 (1961). 3Wecker, E., and E. Schonne, these PROCEEDINGS, 47, 278 (1961). 4 Wecker, E., and A. Richter, in Basic Mechanisms in Animal Virus Biology, Cold Spring Harbor Symposia on Quantit...
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ژورنال
عنوان ژورنال: Nano Energy
سال: 2017
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2016.12.021